Trina Solar has filed a patent for a laminated passivation structure of a solar cell. The structure includes a P-type silicon substrate and three dielectric layers arranged sequentially on the back surface of the substrate. The patent also discloses a method for preparing this structure. GlobalData’s report on Trina Solar gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData s company profile on Trina Solar, artificial photosynthesis was a key innovation area identified from patents. Trina Solar's grant share as of June 2023 was 1%. Grant share is based on the ratio of number of grants to total number of patents.
Laminated passivation structure for solar cell
A recently filed patent (Publication Number: US20230136715A1) describes a laminated passivation structure for solar cells. The structure includes a P-type silicon substrate and three dielectric layers arranged sequentially on the back surface of the substrate.
The first dielectric layer is made of silicon and has a thickness of 1 to 10 nm. The second dielectric layer can be a combination of silicon oxynitride, silicon nitride, and silicon carbide, with a thickness of 1 to 150 nm. It can also have different refractive indexes. The third dielectric layer can be made of silicon and has a thickness of 1 to 200 nm. It can also be a combination of silicon oxide, silicon oxynitride, silicon nitride, and silicon carbide.
The laminated passivation structure can also include additional layers such as a heavily diffused region, a lightly diffused region, and two more dielectric layers on the front surface of the silicon substrate. The fourth dielectric layer is made of SiO2 and has a thickness of 1 to 10 nm. The fifth dielectric layer can be a combination of silicon oxide, silicon oxynitride, silicon nitride, and silicon carbide, with a thickness of 25 to 100 nm.
The laminated passivation structure can further include a front Ag electrode and an aluminum back field connected to the P-type silicon substrate. The diffusion sheet resistance of the heavily and lightly diffused regions can range from 40 to 300 ohm/sq.
The patent also describes a method for preparing the laminated passivation structure. It involves depositing the dielectric layers on the back surface of the silicon substrate using various methods such as thermal oxidation and PECVD. The method can also include the preparation of the heavily and lightly diffused regions and the deposition of the additional dielectric layers.
Overall, this patent presents a laminated passivation structure for solar cells that includes multiple dielectric layers with different compositions and thicknesses. The structure aims to improve the efficiency and performance of solar cells.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies
